Two–dimensional transition metal dichalcogenides (e.g MoS2, MoSe2, WS2, WSe2) are easy to obtain by mechanical exfoliation,
however, only with limited lateral dimensions. In contrast to mechanically exfoliated samples, optimized chemical vapor deposition (CVD)
synthesis not only yields laterally extended single-crystal monolayers or bilayers,
it also allows to control the material composition (such as MoxW1-xSe2) or realize lateral and vertical heterostructures
(such as MoSe2-WSe2) with atomically sharp interfaces. We continuously work on optimizing synthesis parameters towards
material quality, reproducibility and yield, to establish deterministic growth methods for large-area monolayers and heterostructures as elementary
semiconductor building blocks of van der Waals devices with increasing complexity and functionality for quantum optics applications.